RU3060L 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Shenzhen ruichips Semicon RU3060L
- Power Dissipation (Pd): 50W
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 53A
- Gate Threshold Voltage (Vgs(th)@Id): 2.7V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@10V,30A
- Package: TO-252-2(DPAK)
- Manufacturer: Shenzhen ruichips Semicon
